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Tuesday, July 28, 2020 | History

2 edition of 1998 IEEE Bipolar Bicmos Circuits & Technology Meeting Proceedings found in the catalog.

1998 IEEE Bipolar Bicmos Circuits & Technology Meeting Proceedings

Bipolar

1998 IEEE Bipolar Bicmos Circuits & Technology Meeting Proceedings

by Bipolar

  • 66 Want to read
  • 2 Currently reading

Published by Ieee .
Written in English

    Subjects:
  • Science/Mathematics

  • The Physical Object
    FormatHardcover
    ID Numbers
    Open LibraryOL10999199M
    ISBN 100780344987
    ISBN 109780780344983

    Title: Publisher: Begin Year: End Year: Source: Background: JSTOR: IITK: Background on World Politics: JSTOR: IITK: Bailliere's Clinical. IEEE Bipolar, BiCMOS and Compound Semiconductor IC and Technology Symposium, San Diego, Oct. A. Zandieh, P. Schvan, and S.P. Voinigescu, “A 2x Oversampling, GS/s Time-Interleaved Flash ADC for 64GBaud Applications” Digest. IEEE Bipolar, BiCMOS and Compound Semiconductor IC and Technology Symposium, San Diego, Oct.

    Modelling two SiGe HBT specific features for circuit simulation - Bipola r/BiCMOS Circuits and Technology Meeting, Proceedings of the Created Date 10/10/ PM. A Scalable High Frequency Noise Model for Bipolar Transistors with Appli cation to Optimal Transistor - Bipolar/BiCMOS Circuits and Technology Me eting, , Proceedings of the Author: IEEE Created Date: 2/2/ AM.

    SiGe HBT BiCMOS technology is the obvious groundbreaker of the Si heterostructures application space. To date virtually every major player in the communications electronics market either has SiGe up and running in-house or is using someone else’s SiGe fab as foundry for their designers. “ A single-channel 10 b 1GS/s ADC with 1-cycle latency using pipelined cascaded folding,” in Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting, , pp. – [] Chen, Cited by:


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1998 IEEE Bipolar Bicmos Circuits & Technology Meeting Proceedings by Bipolar Download PDF EPUB FB2

Get this from a library. Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting: September[IEEE Electron Devices Society.; IEEE Solid-State Circuits Society.;]. Get this from a library. IEEE Bipolar/BICMOS Circuits and Technology Meeting Proceedings.

[IEEE, Electron Devices Society Staff,; IEEE, Institute of Electrical and Electronics Engineers, Inc. Staff,] -- BCTM provides a forum for technical communication focused on the needs and interests of bipolar and BICMOS engineers.

Title IEEE Bipolar/BiCMOS Circuits and Technology Meeting Desc:Proceedings of a meeting held OctoberMonterey, California. Prod#:CFP08BIP-CDR ISBN Pages:0 Format:CD-ROM Notes: Authorized distributor of all IEEE proceedings Publ:Institute of Electrical and Electronics Engineers (IEEE) POD Publ:Curran Associates, Inc.

(Jan ). BT - Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting. A2 - Anon, null. PB - IEEE. CY - Piscataway, NJ, United States. T2 - Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

Y2 - 27 September through 29 September ER -Cited by: 9. Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting. Country: United States - SIR Ranking of United States: H Index.

Subject Area and Category: Engineering Electrical and Electronic Engineering: Publisher: Publication type: Conferences and. It is with great pleasure that we invite you to be a part of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).

After 39 years of the Compound Semiconductor IC Symposium (CSICS), and 32 years of the Bipolar/BiCMOS Circuit and Technology Meeting (BCTM), and after a successful debut in San Diego.

Bipolar Circuits and Technology Meeting, Portland. 30 likes. The Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) is a forum for technical communication focused on Followers: Austin, Texas, USA October IEEE Catalog Number: ISBN: CFP10BIP-PRT IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

Best Student Paper Award, U. Raghunathan, P. Chakraborty, B. Wier, J. Cressler, H. Yasuda, and P. Menz, “TCAD Modeling of Accumulated Damage During Time-Dependent Mixed-Mode Stress,” Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp.; Best Paper Award, A.

Goyal, M. Swaminathan, A. Chatterjee, D. Howard, and J.D. Cressler, “A Self. The SSCS Meetings Committee seeks to provide members of SSCS and IEEE with a broad range of high quality, peer-reviewed technical conferences as forums for the presentation of technological advances and for discussions among leading researchers and others interested in the arena of solid-state circuits.

Drennan, "Device Mismatch in BiCMOS tech-nologies", BCTM Proceedings of the Bipo-IarBiCMOS Circuits and Technology Meeting, pp. I 1 I, September J.D. Cressler, "Using SiGe HBTs for Extreme Environment Electronics,” Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp.

J.D. Cressler, “Emerging Reliability Issues for SiGe HBTs for Mixed-Signal Circuit Applications,” IEEE Transactions on Device and Materials Reliability, vol. 4, pp. Conference: Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the. ieee bipolar / bicmos circuits and technology meeting radisson hotel & suites austin, texas, usa october 5 – 6, short course — october 4, sponsored by the electron devices society of the institute of electrical and electronic engineers in.

C.M. Grens, J.D. Cressler, and A.J. Joseph, “Analysis of Factors Contributing to Common-Base Avalanche Instabilities in Advanced SiGe HBTs,” Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp.

The Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) is the premier international forum for bipolar/BiCMOS research for technical communication focused on the needs and interests of the bipolar and BiCMOS community.

Title: Cmos Technology Characterization For Analog And Rf Design - Custom Integ rated Circuits Conference, Proceedings of the IEEE Author.

Abstract: Using time sampled DC measurements from standard bench-top semiconductor parameter analyzers, it proves possible to characterize low frequency noise of BJT's down to sub-mHz frequencies. The new technique is exemplified using SiGeC HBT's. Base current random telegraph noise with time constants of as long as tens of seconds is demonstrated.

Abstract. In the last few decades, semiconductor technology has steadily grown in maturity, with silicon transistors able to reach increasingly higher unity-gain frequency (\(f_{ \hbox{max} } \)) has proven to be true for technologies based on both CMOS and SiGe : Jaco du Preez, Saurabh Sinha.

Advanced Modelling Of Distortion Effects In Bipolar Transistors Using Th e Mextram Model - Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the Author: IEEE Created Date: 1/16/ PM.

Rodwell and Seo, IEEE BCTM Short Course, Oct.copyright GHz Bipolar ICs: Device and Circuit Design Principles Mark Rodwell, UCSB Munkyo Seo, Teledyne Scientific Short Course, IEEE Bipolar / BiCMOS Circuits and Technology Meeting, 9 OctoberAtlanta, Georgia [email protected], [email protected] Collaborators.Book Chapters.

P. Kinget, M "Input/output hardware strategies for cellular neural networks," Proceedings of IEEE International Conference on Neural Networks, Orlando, "Ultra-low Voltage Analog Integrated Circuits for nanoscale CMOS,", invited, IEEE Bipolar/BiCMOS Circuits and Technology Meeting, October A.

Balankutty, S.-A.A. Sarkar, K. Greene, and B. Floyd, “A power-efficient 4-element beamformer in nm SiGe BiCMOS for GHz cellular communications,” IEEE Bipolar Circuits and Technology Meeting, Sep.pp. .